Material Science
Activation Energy
5%
Aluminium Gallium Arsenide
13%
Amorphization
12%
Amorphous Material
33%
Amorphous Silicon
7%
Annealing
35%
Boron
6%
Boron Nitride
10%
Carrier Lifetime
6%
Chemical Vapor Deposition
6%
Crystal Structure
5%
Crystalline Material
23%
Deep-Level Transient Spectroscopy
6%
Density
23%
Diamond
7%
Dielectric Material
18%
Doping (Additives)
10%
Electronic Circuit
6%
Epilayers
6%
Epitaxy
11%
Film
37%
Gallium Arsenide
65%
Germanium
10%
Heterojunction
16%
III-V Semiconductor
9%
Indentation
10%
Indium
5%
Indium Gallium Arsenide
14%
Ion Implantation
37%
Luminescence
7%
Metal-Organic Chemical Vapor Deposition
7%
Metamaterial
6%
Monolayers
6%
Nanocrystalline Material
40%
Nanoindentation
9%
Nanoparticle
15%
Nanotube
9%
Nanowire
100%
Nitride Compound
5%
Nucleation
6%
Optical Property
12%
Oxidation Reaction
7%
Oxide Compound
14%
Photoluminescence
30%
Photovoltaics
6%
Powder
5%
Quantum Dot
19%
Quantum Well
18%
Refractive Index
5%
Silicon
52%
Silicon Dioxide
16%
Single Crystal
6%
Solar Cell
14%
Thin Films
18%
Titanium Dioxide
9%
Transmission Electron Microscopy
21%
Waveguide
6%
ZnO
16%
Engineering
Aluminium Gallium Arsenide
13%
Channelling
5%
Core-Shell
6%
Defects
22%
Diamond
5%
Dielectrics
5%
Energy Engineering
13%
Gallium Arsenide
46%
Heterostructures
6%
Indentation
5%
Indium Gallium Arsenide
16%
Interdiffusion
5%
Ion Implantation
17%
Low-Temperature
6%
Nanoparticle
7%
Nanowires
50%
Nitride
7%
Passivation
7%
Photodetector
10%
Plasmonics
5%
Quantum Dot
16%
Quantum Well
18%
Ray Absorption
6%
Room Temperature
11%
Solar Cell
9%
Thin Films
11%
Transmissions
14%
Physics
Dielectrics
7%
Exciton
5%
Fine Structure
5%
Fluence
5%
Heavy Ion
7%
Ion Beams
5%
Ion Implantation
10%
Ion Irradiation
5%
Metasurface
15%
Nanowires
16%
Photoluminescence
12%
Photometer
5%
Quantum Dot
14%
Quantum Wells
13%
Room Temperature
6%
Transients
5%
Transmission Electron Microscopy
5%
Waveguide
8%
Wurtzite
5%