Material Science
Silicon
100%
Nanocrystalline Material
71%
Annealing
63%
Film
62%
Amorphous Material
56%
Silicon Dioxide
53%
Ion Implantation
50%
Photoluminescence
35%
Nanowire
31%
Crystalline Material
29%
Transmission Electron Microscopy
25%
Thin Films
24%
Epitaxy
22%
Amorphization
21%
Heterojunction
21%
Activation Energy
21%
Density
20%
Gallium Arsenide
20%
Oxide Compound
19%
Oxidation Reaction
18%
Luminescence
14%
Neuromorphic Computing
14%
Metal Oxide
13%
Silicon Ion
13%
Boron
10%
Amorphous Silicon
10%
Dielectric Material
10%
Doping (Additives)
10%
Germanium
10%
Reflectivity
9%
Solid Phase Epitaxy
8%
Nucleation
8%
Rutherford Backscattering Spectrometry
8%
Radiation Damage
8%
Waveguide
8%
Electronic Circuit
8%
Nanoindentation
7%
Oxide Film
7%
Capacitance
6%
Si-Ge Alloys
6%
Anode
6%
Titanium Dioxide
6%
Finite Element Modeling
6%
Graphene
6%
Nanoparticle
6%
Erbium
6%
Sapphire
6%
Secondary Ion Mass Spectrometry
5%
Raman Spectroscopy
5%
Optical Property
5%
Engineering
Defects
34%
Nanowires
23%
Ion Implantation
23%
Energy Engineering
20%
Transmissions
19%
Gallium Arsenide
19%
Thin Films
18%
Alloy Layer
18%
Channelling
17%
Implant
14%
Passivation
14%
Activation Energy
14%
Room Temperature
12%
Low-Temperature
11%
Strained Layer
11%
Heterostructures
10%
Switching Threshold
10%
Silicon Nanocrystal
9%
Strain Relaxation
9%
Negative Differential Resistance
8%
Resistive
8%
Enhanced Diffusion
7%
Si Substrate
7%
Elevated Temperature
7%
Radiation Effect
6%
Ge Concentration
6%
Silicon Substrate
6%
Energy Dissipation
6%
Deposited Film
5%
Substrate Temperature
5%
Diffusivity
5%
Refractive Index
5%
Temperature Range
5%
Transients
5%
Depth Profile
5%
Photonics
5%
Solid Angle
5%
Silicon Layer
5%
Sheet Resistance
5%
Annealing Temperature
5%
Extended Defect
5%
Pulse Height
5%
Ray Diffraction
5%
Polycrystalline
5%
Physics
Heavy Ion
15%
Waveguide
14%
Ion Implantation
14%
Photoluminescence
13%
Fluence
13%
Ion Beams
13%
Transmission Electron Microscopy
11%
Room Temperature
10%
Backscattering
9%
Memristor
7%
Optical Waveguides
6%
Ion Irradiation
6%
Gas Ionization
6%