An entirely new approach to low temperature fabrication of silicon-based thin film transistors (TFTs) for flat panel displays

This project is based on an entirely new approach to selective low temperature crystallization of amorphous silicon with the potential for dramatically improving thin film transistor (TFT) technology for fabrication of low-cost flat panel displays. We plan to exploit our novel finding that high pressure phases induced in amorphous silicon during nanoindentation can be transformed into localized polycrystalline silicon domains ( the active regions of TFTs) at annealing temperatures as low as 150C. WRiota, a new Australian high-tech company intend to exploit the technology.