Atomic Scale Identification of Amorphization and Relation Processes in Compound Semiconductors

We seek a fundamental understanding of the processes that govern implantation-induced structure, at the nanometer scale, in the compound semiconductors used in photonic device fabrication. Since implantation-induced disorder limits the performance of such devices, the proposed project is of substantial technological significance and national benefit. The Photon Science techniques of perturbed angular correlation and extended x-ray absorption fine structure spectroscopy will be used to identify the mechanism of amorphisation and relaxation in order to enable more effective exploitation of compound semiconductors in advanced telecommunications systems.