Band Gap Engineering of Novel (In,Ga)SbN Epitaxial Semiconductors for High-Performance Long-Wavelength Optoelectronic Devices

The main aims of this project are to develop and produce high-quality layers of novel (In,Ga)SbN compound semiconductors for infrared optoelectronic devices. This material system which can be grown lattice-matched on various substrates is of great interest for a wide range of infrared optoelectronic devices and has a disruptive impact in areas of national defence and security, environmental monitoring and manufacturing industries. Currently, there is little knowledge about this material system despite its importance in physics and applications. The results of this project will dramatically enhance the understanding of N incorporation mechanisms into (In,Ga)Sb matrixes and help to create a new generation of infrared emitters and detectors.