Charge transport and trapping in high-k dielectric films containing self-assembled nanocrystals

Growth in the use of portable electronic devices and embedded electronic systems has resulted in an increased demand for low-power, high-density non-volatile memory (NVM). However, the scaling of these devices to smaller dimensions is approaching fundamental physical limits and future advances will depend on the use of new materials and greater understanding of limiting processes. A new technique in which the memory is encoded by charged nanocrystals embedded in a high-dielectric constant (high-k) insulating film holds great promise in this regard, and it is the aim of this project to understand the physical processes underpinning this approach