Controlling the forming and switching characteristics of non-volatile resistive memory devices using ion implantation

    Project: Research

    Project Details

    Description

    This proposal brings together leading researchers from Australia and Varian Semiconductor Equipment Associates (VSEA), the world's largest manufacturer of ion-implanters, to develop new ion-implantation-based techniques for improving the performance of non-volatile memory devices based on the resistive switching mechanism. Such devices are attractive alternatives to existing charge-storage devices as they are based on a simple architecture and offer better scalability. However, they also suffer some limitations, namely: high forming voltages, variability in set/rest characteristics and poor endurance. This project will use defect engineering, doping and ion-beam-induced compositional changes as a means of addressing these limitations.
    StatusFinished
    Effective start/end date1/01/1231/12/16

    Fingerprint

    Explore the research topics touched on by this project. These labels are generated based on the underlying awards/grants. Together they form a unique fingerprint.