Project Details
Description
This proposal brings together leading researchers from Australia and Varian Semiconductor Equipment Associates (VSEA), the world's largest manufacturer of ion-implanters, to develop new ion-implantation-based techniques for improving the performance of non-volatile memory devices based on the resistive switching mechanism. Such devices are attractive alternatives to existing charge-storage devices as they are based on a simple architecture and offer better scalability. However, they also suffer some limitations, namely: high forming voltages, variability in set/rest characteristics and poor endurance. This project will use defect engineering, doping and ion-beam-induced compositional changes as a means of addressing these limitations.
Status | Finished |
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Effective start/end date | 1/01/12 → 31/12/16 |
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