Project Details
Description
The dream of integrated optoelectronic circuits requires methods to selectively modify the optical and electronic properties of heterostructures. Interdiffusion using ion implantation or dielectric capping has recently become an attractive approach to modify the bandgap of quantum well structures. A detailed knowledge of defects in these structures is crucial for realizing integrated optoelectronic devices using such techniques. This project will involve a comprehensive study of the defects which are created by either ion implantation or silica capping to induce intermixing in III-V semiconductor structures. Such information will bridge the gap between device technology and basic defect issues in these materials.
Status | Finished |
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Effective start/end date | 1/07/01 → 30/06/04 |
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