Developing antimonide-based III-V ternary NW materials for high performance infrared photodetector applications

We aim at developing a series of high quality antimonide based nanowire materials and structures with tunable composition, wavelength, spectral linewidth, for high performance infrared photodetector applications. This project will focus on two innovative ideas, namely to demonstrate NW infrared photodetectors based on GaAsSb/InP core-shell structures and GaAsSb nanowire arrays, both of which has not been reported before. It is expected that the proposed research will significantly advance the knowledge of nanoscale light-matter interaction in terms of light coupling and absorption, as well as nanoscale carrier generation and collection. This, together with the new technological development through the design, fabrication and characterization of single or array nanowire based photodetectors will pave the way for the development of future advanced optoelectronics, sensing, and communication systems.