Development of High Performance III-V Semiconductor Photoconductive Antennas for Terahertz Applications

The terahertz (THz) regime of the electromagnetic spectrum spans the frequency range between the midinfrared and the millimetre/microwave. It has great potential in detecting the nature of low energy processes in physics, chemistry and biomedicine, leading to unique applications in sensing, imaging, communication, and medical diagnostics. This project aims at studying the use of III-V semiconductor materials for THz application through modification of their properties by the novel approaches of defect engineering. This will allow us to fabricate a new generation of high performance THz photoconductive antennas (emitters/detectors) to expand the capability of the existing THz systems for various applications.