Development of high performance wide-bandgap polar oxide electronic and optoelectronic devices

This project aims at developing high performance wide-bandgap oxide based electronic and optoelectronic devices by combining polarization engineering with bandgap engineering. This will be approached by studying how the polarization effect depends on the fundamental physical properties of polar, semi-polar and nonpolar Zn (Be, Mg)O materials. Bandgap engineering through the incorporation of heterostructures and quantum confinement effects will also be conducted to fully exploit the full potential of this class of materials. Through this project, scientific understanding and conceptual advances in polarization-related physics will be enriched and high-electron mobility transistors and photodetectors will be developed and demonstrated.