Dopants, defects and related issues in Zinc Oxide

ZnO has unique properties which have applications in high performance optoelectronic devices such as LEDs and UV lasers. This project addresses key issues in ZnO research crucial for ZnO based devices to become a reality: (1) reliable and thermally stable p-type doping by ion implantation and growth, (2) study the implantation induced issues- non-stochiometry and interstitial defects- and understand its effect on defect formation and dopant activation (2) develop key procedures for good quality and long term stability in Schottky diode formation (3) detailed characterisation of defects, both electrically active and microstructural (4) develop suitable diffusion barriers for surface passivation and preservation