Exploiting deep sub-surface temperature-induced phase-transformations for an improved approach to semiconductor laser-dicing

The main aims of this project are to utilize high power pulsed lasers focused below the surface of semiconductors to: i) achieve and optimize laser-dicing of wafers/structures at high throughput with zero cutting widths and no surface debris; and ii) understand temperature-induced phase transformations and material modifications that occur under these laser conditions. This new collaboration brings together a synergistic team including the industry leader in laser dicing (ALSI), foremost expertise in phase transformations in semiconductors (ANU) and heat flow simulation (University of Twente) to address not only exciting basic material modification issues, but to develop innovative technology of importance to semiconductor industry.