Fabrication of photonic devices using seniconductor nanostructures

Main aim of this research is to develop epitaxial growth technology for the fabrication of quantum dots (QDs) and using these for device application of QD lasers. The use of selective area growth technique for the fabrication of QD laser structures proposed in this project is effective for the improvement of device performance. We expect that the reduced leakage current owing to the use of mask (insulating) layer will decrease the threshold current density to obtain a simulated emission from the laser structures. Lasers with low threshold current allow for room temperature continuous wave (CW) operation in the wavelength range of 900-1300 nm.