Growth, Characterisation and Fabrication of GaInNAs Lasers and Intermixing in GaInNAs Quantum Wells for Photonic Device Integration

    Project: Research

    Project Details

    Description

    This project addresses one of the hottest topics in semiconductor optoelectronics, namely the development of vertical cavity surface emitting lasers (VCSELs) operating at 1.3 and 1.55 um wavelength for applications in long haul optical communications. It involves the study of an exciting new class of semiconductor materials leading to the fabrication of the VCSELs and the use of a novel technique to intermix layers in these materials for photonic device integration. Layer intermixing in these new materials can potentially lead to the integration of photonic devices of different wavelengths on the same chip for wavelength division multiplexing applications.
    StatusFinished
    Effective start/end date19/02/0118/02/06

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