Implant Isolation of III-V Compound Semiconductor Devices and Structures

Individual devices in an integrated circuit can be electrically isolated from each other by irradiating the materials between them with high energy ions. This creates defects in the semiconductor that trap charge carriers and thereby increase the resistance of the material. However, the effectiveness of this process depends on the material as well as irradiation and post-irradiation processing conditions. This project aims to develop an implant isolation scheme for a new class of devices developed by Epitactix, an Australian start-up company founded on CSIRO research. This will be achieved by combining the ANU s experience and expertise in ion-irradiation and defect engineering with the device and processing expertise of Epitactix Pty Ltd.