InAsSb Quantum Dots for Mid-Infrared Lasers

This project aims to grow high-quality InP-based InAsSb quantum dots (QDs) and fabricate mid-infrared (1.8~3.5 micron) QD laser devices. Mid-infrared semiconductor lasers are highly desirable in national defence and security, environmental monitoring and molecular spectroscopy. InP-based InAsSb QDs, whose emission wavelength can be tuned by controlling the Sb content, dot size and density, are of great interest for these devices and could have a disruptive impact. The results of this project will dramatically enhance the understanding of growth mechanisms of InAsSb QDs on InP and help to create a new generation of mid-infrared lasers.