Indium Arsenide Nanowire Array Shortwave Infrared Photodetectors

Q rep reqd - III-V compound semiconductor nanowires have shown great promise for the development of thenext-generation optoelectronic devices such as lasers/LEDs, solar cells and photodetectors, owing totheir nanoscale size, direct bandgap, and excellent optical and electrical properties. we aim to develop high performance indium arsenidenanowire materials and structures for shortwave infrared photodetector applications at roomtemperature.