Integration of III-V semiconductor nanowires on silicon platform

The ultimate goal of this project is to integrate III-V semiconductor nanowire devices on silicon which has long been a pursuit of the semiconductor industry and academic researchers. Specifically this project will address the epitaxial growth of III-V semiconductor nanowires and fabricate nanowire optoelectronic and microelectronic devices on Si platform. The successful integration of these material systems will have a revolutionary impact for the photonic and electronic industries. The outcome of this project will create a new generation of semiconductor devices and integrated optoelectronic circuits, and strengthen the capacity of Australian researchers in areas of nanoscience and nanotechnology.