Ion-beam synthesis of functional oxides for next generation memory devices

In thin film form, transition metal oxides can be subjected to intense electric fields and exhibit characteristic resistance changes suitable for non-volatile memory applications. However, their electrical response depends critically on stoichiometry and this must be precisely engineered for optimal device performance. Here we explore a low-temperature approach to stoichiometry control using direct oxide synthesis and defect-engineering based on ion-implantation, a routine semiconductor fabrication process. This has the potential to improve device manufacturability and functionality. The project will benefit from access to expertise and state-of-the-art semiconductor processing tools available through collaboration with Applied Materials.