Ion implantation engineered photonic devices for use in highly intergrated silicon optoelectronic circuits

We address the requirement for Distributed Bragg Gratings (DBG), integrated with silicon optical waveguides. Our novel approach uses ion implantation damage to induce perturbations in refractive index, maintaining waveguide planarity while allowing the variation of grating angle. DBGs are able to isolate a narrow spectral band from a broad wavelength range and are essential for the future development of photonic circuits, including those which will form the basis of the first silicon lasers. Our aim is to use standard processing technologies to development novel integrated functionality. Success will lead to the establishment of a significant international collaboration.