Ion Implantation Induced Diffusion and Defect Evolution I Si Nanostructures

A fundamental understanding of nanostructures is essential for the development of nanoscale electronic devices. This project will investigate ion implantation of dopant atoms into Si nanostructures. The goal is to develop a broad understanding of the effect of the nanostructure dimensions on point-defect-induced diffusion and the formation of extended defects. In particular, the influence of multiple surfaces on point-defect recombination will be investigated. Concurrently, the techniques necessary for the analysis of nano-structures will be developed.