Ion Implantation Processing in Silicon Carbide for Microelectronic Applications

The aim of this project is to study the application of ion implantation to silicon carbide for dopant incorporation and defect engineering. The successful dopant incorporation, especially p-type doping will be crucial for SiC high power and high frequency devices. The outcomes of the project are (a) the understanding of extended and point defect formation in silicon carbide from ion implantation. (b) detailed characterisation of the extended defects formed by ion implantation (c) establishment of dose regimes for point defects and extended defect formation and (d) development of procedures for the incorporation of dopants with minimum residual defect formation.