Nanocavities in Si: Structural Evolution and Metal Gettering

Nanocavities represent a novel means of minimising metallic contamination in the active region of Si microelectronic devices. We propose innovative experiments, using in-situ transmission electron microscopy and synchrotron-based x-ray methods, to achieve a fundamental understanding of the processes that govern nanocavity structural evolution and metallic impurity trapping. We seek to develop a patentable technology to enhance impurity trapping efficiency and thus dramatically increase the applicability of this industrially-relevant process.