Narrow band gap silicon: understanding and exploiting this new silicon phase

The overarching aim of this project is to investigate for the first time structural, electronic and optical properties of the exciting new high pressure phases of silicon that can be formed by patterned nanoindentation. The project will exploit scientific and technological opportunities that derive from our recent finding that the high pressure phase Si-XII is a narrow bandgap semiconductor that can be doped at room temperature. Apart from new knowledge of properties of these novel materials, the technological outcomes include potential significant applications such as in large area electronics, novel sensing devices, and solar cells. This collaborative project with UC Berkeley will be a fertile training ground for students and postdocs.