Selective Area Nano-Epitaxy

This Fellowship aims to build a new major program in selective area nano-epitaxy of III-V semiconductor nanowires. It involves the study of nanowire growth, without any catalyst, by vapour phase epitaxy on patterned substrates and the characterisation of these nanowires. This is in contrast to most research effort currently being devoted to using gold catalysts to nucleate the nanowires. These nanowires would then be used to demonstrate new and advanced concept optoelectronic devices. Semiconductor nanowire devices are expected to bring the second wave of photonics revolution we experienced in the 90s. The outcomes from this project will result in high quality nanowires and pave the way for a new class of devices for future applications.