Switching mechanisms in nonvolatile resistive memory using high-k dielectrics

Growth in the use of portable electronic devices and imbedded systems has resulted in an increased demand for low-power, high-density, non-volatile memory (NVM). The current project aims to develop resistive devices (RRAM) for this purpose through a better understanding of resistive switching mechanisms in metal oxide films and the development of new and innovative processes for controlling the switching characteristics of such materials. The project is in collaboration with Silanna, an Australian start-up company aiming to develop and commercialise such technology. It combines interesting fundamental research with the strategic and commercial interests of a new high-technology start-up company.