21.3%-efficient n-type silicon solar cell with a full area rear TiOx/LiF/Al electron-selective contact

Wenjie Wang; Jian He; Di Yan; Chris Samundsett; Sieu Pheng Phang; Zengguang Huang; Wenzhong Shen; James Bullock; Yimao Wan

doi:10.1016/j.solmat.2019.110291

21.3%-efficient n-type silicon solar cell with a full area rear TiO_x/LiF/Al electron-selective contact

Wenjie Wang, Jian He, Di Yan, Chris Samundsett, Sieu Pheng Phang, Zengguang Huang, Wenzhong Shen^*, James Bullock, Yimao Wan

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

49 Citations (Scopus)

Abstract

In this work, we investigate an efficient electron-selective passivating contact with TiO_x/LiF/Al contact structure, which offers both low surface recombination and specific contact resistance. Optimized TiO_x layer thickness of 4 nm provides high quality surface passivation, achieving minority carrier lifetime of 3.03 ms on 5 Ω cm n-type wafers, with a saturated current density J₀ of 23 fA/cm². In addition, inserting a 1 nm LiF between the 4 nm TiO_x and Al reduces the contact resistivity to 18 mΩ cm². The low contact resistivity of TiO_x/LiF/Al contact is attributed to barrier reduction from the low work function of LiF/Al stack. A champion solar cell efficiency of 21.3% has been achieved for an n-type crystalline silicon device with a full-area rear TiO_x/LiF/Al contact, demonstrating the excellent potential of this passivating contact for fabricating high-efficiency silicon solar cells.

Original language	English
Article number	110291
Journal	Solar Energy Materials and Solar Cells
Volume	206
DOIs	https://doi.org/10.1016/j.solmat.2019.110291
Publication status	Published - Mar 2020

Access to Document

10.1016/j.solmat.2019.110291

Cite this

@article{6bff3ca9f6e74b12b39ec3178e01e6fd,

title = "21.3%-efficient n-type silicon solar cell with a full area rear TiOx/LiF/Al electron-selective contact",

abstract = "In this work, we investigate an efficient electron-selective passivating contact with TiOx/LiF/Al contact structure, which offers both low surface recombination and specific contact resistance. Optimized TiOx layer thickness of 4 nm provides high quality surface passivation, achieving minority carrier lifetime of 3.03 ms on 5 Ω cm n-type wafers, with a saturated current density J0 of 23 fA/cm2. In addition, inserting a 1 nm LiF between the 4 nm TiOx and Al reduces the contact resistivity to 18 mΩ cm2. The low contact resistivity of TiOx/LiF/Al contact is attributed to barrier reduction from the low work function of LiF/Al stack. A champion solar cell efficiency of 21.3% has been achieved for an n-type crystalline silicon device with a full-area rear TiOx/LiF/Al contact, demonstrating the excellent potential of this passivating contact for fabricating high-efficiency silicon solar cells.",

keywords = "ALD-TiO, Electron-selective contact, High-efficient c-Si solar cell",

author = "Wenjie Wang and Jian He and Di Yan and Chris Samundsett and Phang, {Sieu Pheng} and Zengguang Huang and Wenzhong Shen and James Bullock and Yimao Wan",

note = "Publisher Copyright: {\textcopyright} 2019 Elsevier B.V.",

year = "2020",

month = mar,

doi = "10.1016/j.solmat.2019.110291",

language = "English",

volume = "206",

journal = "Solar Energy Materials and Solar Cells",

issn = "0927-0248",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - 21.3%-efficient n-type silicon solar cell with a full area rear TiOx/LiF/Al electron-selective contact

AU - Wang, Wenjie

AU - He, Jian

AU - Yan, Di

AU - Samundsett, Chris

AU - Phang, Sieu Pheng

AU - Huang, Zengguang

AU - Shen, Wenzhong

AU - Bullock, James

AU - Wan, Yimao

PY - 2020/3

Y1 - 2020/3

N2 - In this work, we investigate an efficient electron-selective passivating contact with TiOx/LiF/Al contact structure, which offers both low surface recombination and specific contact resistance. Optimized TiOx layer thickness of 4 nm provides high quality surface passivation, achieving minority carrier lifetime of 3.03 ms on 5 Ω cm n-type wafers, with a saturated current density J0 of 23 fA/cm2. In addition, inserting a 1 nm LiF between the 4 nm TiOx and Al reduces the contact resistivity to 18 mΩ cm2. The low contact resistivity of TiOx/LiF/Al contact is attributed to barrier reduction from the low work function of LiF/Al stack. A champion solar cell efficiency of 21.3% has been achieved for an n-type crystalline silicon device with a full-area rear TiOx/LiF/Al contact, demonstrating the excellent potential of this passivating contact for fabricating high-efficiency silicon solar cells.

AB - In this work, we investigate an efficient electron-selective passivating contact with TiOx/LiF/Al contact structure, which offers both low surface recombination and specific contact resistance. Optimized TiOx layer thickness of 4 nm provides high quality surface passivation, achieving minority carrier lifetime of 3.03 ms on 5 Ω cm n-type wafers, with a saturated current density J0 of 23 fA/cm2. In addition, inserting a 1 nm LiF between the 4 nm TiOx and Al reduces the contact resistivity to 18 mΩ cm2. The low contact resistivity of TiOx/LiF/Al contact is attributed to barrier reduction from the low work function of LiF/Al stack. A champion solar cell efficiency of 21.3% has been achieved for an n-type crystalline silicon device with a full-area rear TiOx/LiF/Al contact, demonstrating the excellent potential of this passivating contact for fabricating high-efficiency silicon solar cells.

KW - ALD-TiO

KW - Electron-selective contact

KW - High-efficient c-Si solar cell

UR - http://www.scopus.com/inward/record.url?scp=85076565270&partnerID=8YFLogxK

U2 - 10.1016/j.solmat.2019.110291

DO - 10.1016/j.solmat.2019.110291

M3 - Article

SN - 0927-0248

VL - 206

JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

M1 - 110291

ER -

21.3%-efficient n-type silicon solar cell with a full area rear TiO_x/LiF/Al electron-selective contact

Abstract

Access to Document

Other files and links

Fingerprint

Cite this