22.6% Efficient Solar Cells with Polysilicon Passivating Contacts on n-type Solar-Grade Wafers

Rabin Basnet; Sieu Pheng Phang; Christian Samundsett; Di Yan; Wensheng Liang; Chang Sun; Stephane Armand; Roland Einhaus; Julien Degoulange; Daniel Macdonald

doi:10.1002/solr.201900297

22.6% Efficient Solar Cells with Polysilicon Passivating Contacts on n-type Solar-Grade Wafers

Rabin Basnet^*, Sieu Pheng Phang, Christian Samundsett, Di Yan, Wensheng Liang, Chang Sun, Stephane Armand, Roland Einhaus, Julien Degoulange, Daniel Macdonald

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

Czochralski (Cz)-grown upgraded metallurgical-grade (UMG) silicon wafers degrade significantly during high-temperature processes, eroding their appeal as a low-cost alternative to conventional electronic-grade silicon wafers. However, the thermal degradation in UMG wafers can be delayed by utilizing a prefabrication annealing step. Based on this, a high-efficiency solar-cell process is modified by selecting a single-boron diffusion step and applying phosphorus-doped polycrystalline films as electron-selective contacts with excellent impurity-gettering properties to minimize the thermal budget. The application of this modified high-efficiency solar-cell process to n-type UMG-Cz wafers results in a solar cell with a conversion efficiency of 22.6% on a cell area of 2 × 2 cm².

Original language	English
Article number	1900297
Journal	Solar RRL
Volume	3
Issue number	11
DOIs	https://doi.org/10.1002/solr.201900297
Publication status	Published - 1 Nov 2019

Access to Document

10.1002/solr.201900297

Cite this

@article{f83fe07ed13f444d921d80037b74afbb,

title = "22.6% Efficient Solar Cells with Polysilicon Passivating Contacts on n-type Solar-Grade Wafers",

abstract = "Czochralski (Cz)-grown upgraded metallurgical-grade (UMG) silicon wafers degrade significantly during high-temperature processes, eroding their appeal as a low-cost alternative to conventional electronic-grade silicon wafers. However, the thermal degradation in UMG wafers can be delayed by utilizing a prefabrication annealing step. Based on this, a high-efficiency solar-cell process is modified by selecting a single-boron diffusion step and applying phosphorus-doped polycrystalline films as electron-selective contacts with excellent impurity-gettering properties to minimize the thermal budget. The application of this modified high-efficiency solar-cell process to n-type UMG-Cz wafers results in a solar cell with a conversion efficiency of 22.6% on a cell area of 2 × 2 cm2.",

keywords = "polycrystalline contacts, ring defects, solar-grade silicon, tabula rasa",

author = "Rabin Basnet and Phang, {Sieu Pheng} and Christian Samundsett and Di Yan and Wensheng Liang and Chang Sun and Stephane Armand and Roland Einhaus and Julien Degoulange and Daniel Macdonald",

note = "Publisher Copyright: {\textcopyright} 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim",

year = "2019",

month = nov,

day = "1",

doi = "10.1002/solr.201900297",

language = "English",

volume = "3",

journal = "Solar RRL",

issn = "2367-198X",

publisher = "Wiley-VCH Verlag GmbH",

number = "11",

}

TY - JOUR

T1 - 22.6% Efficient Solar Cells with Polysilicon Passivating Contacts on n-type Solar-Grade Wafers

AU - Basnet, Rabin

AU - Phang, Sieu Pheng

AU - Samundsett, Christian

AU - Yan, Di

AU - Liang, Wensheng

AU - Sun, Chang

AU - Armand, Stephane

AU - Einhaus, Roland

AU - Degoulange, Julien

AU - Macdonald, Daniel

PY - 2019/11/1

Y1 - 2019/11/1

N2 - Czochralski (Cz)-grown upgraded metallurgical-grade (UMG) silicon wafers degrade significantly during high-temperature processes, eroding their appeal as a low-cost alternative to conventional electronic-grade silicon wafers. However, the thermal degradation in UMG wafers can be delayed by utilizing a prefabrication annealing step. Based on this, a high-efficiency solar-cell process is modified by selecting a single-boron diffusion step and applying phosphorus-doped polycrystalline films as electron-selective contacts with excellent impurity-gettering properties to minimize the thermal budget. The application of this modified high-efficiency solar-cell process to n-type UMG-Cz wafers results in a solar cell with a conversion efficiency of 22.6% on a cell area of 2 × 2 cm2.

AB - Czochralski (Cz)-grown upgraded metallurgical-grade (UMG) silicon wafers degrade significantly during high-temperature processes, eroding their appeal as a low-cost alternative to conventional electronic-grade silicon wafers. However, the thermal degradation in UMG wafers can be delayed by utilizing a prefabrication annealing step. Based on this, a high-efficiency solar-cell process is modified by selecting a single-boron diffusion step and applying phosphorus-doped polycrystalline films as electron-selective contacts with excellent impurity-gettering properties to minimize the thermal budget. The application of this modified high-efficiency solar-cell process to n-type UMG-Cz wafers results in a solar cell with a conversion efficiency of 22.6% on a cell area of 2 × 2 cm2.

KW - polycrystalline contacts

KW - ring defects

KW - solar-grade silicon

KW - tabula rasa

UR - http://www.scopus.com/inward/record.url?scp=85083553822&partnerID=8YFLogxK

U2 - 10.1002/solr.201900297

DO - 10.1002/solr.201900297

M3 - Article

SN - 2367-198X

VL - 3

JO - Solar RRL

JF - Solar RRL

IS - 11

M1 - 1900297

ER -

22.6% Efficient Solar Cells with Polysilicon Passivating Contacts on n-type Solar-Grade Wafers

Abstract

Access to Document

Other files and links

Fingerprint

Cite this