Abstract
Recent improvement in the performance of silicon solar cells has produced outstanding energy conversion efficiencies of 27.5 percent by the use of high-resistivity rear-contacted cells. Parallel improvements in the more conventional bifacially contacted low-resistivity cells are described which have increased the efficiencies of such devices to 25 percent in the 50-100-suns concentration range. Efficiencies of 22 percent under one-sun concentration are also reported, comparable to those obtained with the high-resistivity approach, although not directly comparable to efficiencies for nonconcentrating cells for reasons outlined.
| Original language | English |
|---|---|
| Pages (from-to) | 583-585 |
| Number of pages | 3 |
| Journal | IEEE Electron Device Letters |
| Volume | 7 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - Oct 1986 |
| Externally published | Yes |
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