Abstract
A new high-performance cell structure has been developed, combining the better features of metal insulator semiconductor and p-n junction technologies. The metal-insulator-NP junction (MINP) cell technology described has an inherently superior performance to either of its constituent technologies, producing open-circuit voltages up to 678 mV (AMO, 25°C) for silicon cells. Analysis of the dark saturation current of MINP devices as a function of bulk resistivity indicates that both bulk and surface recombination contribute to this current, with the former dominating. Prospects for exceeding 700-mV open-circuit voltage with this approach are discussed. The structure is particularly well suited for fabrication using ion implantation.
Original language | English |
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Pages (from-to) | 483-485 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 39 |
Issue number | 6 |
DOIs | |
Publication status | Published - 1981 |
Externally published | Yes |