678-mV open-circuit voltage silicon solar cells

A. W. Blakers; M. A. Green

doi:10.1063/1.92767

678-mV open-circuit voltage silicon solar cells

A. W. Blakers^*, M. A. Green

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

26 Citations (Scopus)

Abstract

A new high-performance cell structure has been developed, combining the better features of metal insulator semiconductor and p-n junction technologies. The metal-insulator-NP junction (MINP) cell technology described has an inherently superior performance to either of its constituent technologies, producing open-circuit voltages up to 678 mV (AMO, 25°C) for silicon cells. Analysis of the dark saturation current of MINP devices as a function of bulk resistivity indicates that both bulk and surface recombination contribute to this current, with the former dominating. Prospects for exceeding 700-mV open-circuit voltage with this approach are discussed. The structure is particularly well suited for fabrication using ion implantation.

Original language	English
Pages (from-to)	483-485
Number of pages	3
Journal	Applied Physics Letters
Volume	39
Issue number	6
DOIs	https://doi.org/10.1063/1.92767
Publication status	Published - 1981
Externally published	Yes

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abstract = "A new high-performance cell structure has been developed, combining the better features of metal insulator semiconductor and p-n junction technologies. The metal-insulator-NP junction (MINP) cell technology described has an inherently superior performance to either of its constituent technologies, producing open-circuit voltages up to 678 mV (AMO, 25°C) for silicon cells. Analysis of the dark saturation current of MINP devices as a function of bulk resistivity indicates that both bulk and surface recombination contribute to this current, with the former dominating. Prospects for exceeding 700-mV open-circuit voltage with this approach are discussed. The structure is particularly well suited for fabrication using ion implantation.",

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AU - Green, M. A.

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AB - A new high-performance cell structure has been developed, combining the better features of metal insulator semiconductor and p-n junction technologies. The metal-insulator-NP junction (MINP) cell technology described has an inherently superior performance to either of its constituent technologies, producing open-circuit voltages up to 678 mV (AMO, 25°C) for silicon cells. Analysis of the dark saturation current of MINP devices as a function of bulk resistivity indicates that both bulk and surface recombination contribute to this current, with the former dominating. Prospects for exceeding 700-mV open-circuit voltage with this approach are discussed. The structure is particularly well suited for fabrication using ion implantation.

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678-mV open-circuit voltage silicon solar cells

Abstract

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