A comparative study of transistors based on wurtzite and zincblende InAs nanowires

M. Williams; A. M. Burke; H. J. Joyce; A. P. Micolich; H. H. Tan; C. Jagadish

doi:10.1109/COMMAD.2010.5699740

A comparative study of transistors based on wurtzite and zincblende InAs nanowires

M. Williams
, A. M. Burke
, H. J. Joyce
, A. P. Micolich
, H. H. Tan
, C. Jagadish

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › peer-review

Abstract

We report a comparative study of the electronic properties of nominally identical nanowire field-effect transistor (NW-FET) devices produced using 50 nm diameter InAs nanowires that differ only in phase: ZB on the one hand, and WZ on the other. We find much higher current densities in the ZB NW-FETs, and on/off ratios of up to 100.

Original language	English
Title of host publication	2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings
Pages	203-204
Number of pages	2
DOIs	https://doi.org/10.1109/COMMAD.2010.5699740
Publication status	Published - 2010
Event	2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 - Canberra, ACT, Australia Duration: 12 Dec 2010 → 15 Dec 2010

Publication series

Name	Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Conference

Conference	2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010
Country/Territory	Australia
City	Canberra, ACT
Period	12/12/10 → 15/12/10

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10.1109/COMMAD.2010.5699740

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Williams, M., Burke, A. M., Joyce, H. J., Micolich, A. P., Tan, H. H., & Jagadish, C. (2010). A comparative study of transistors based on wurtzite and zincblende InAs nanowires. In 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings (pp. 203-204). Article 5699740 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). https://doi.org/10.1109/COMMAD.2010.5699740

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title = "A comparative study of transistors based on wurtzite and zincblende InAs nanowires",

abstract = "We report a comparative study of the electronic properties of nominally identical nanowire field-effect transistor (NW-FET) devices produced using 50 nm diameter InAs nanowires that differ only in phase: ZB on the one hand, and WZ on the other. We find much higher current densities in the ZB NW-FETs, and on/off ratios of up to 100.",

author = "M. Williams and Burke, \{A. M.\} and Joyce, \{H. J.\} and Micolich, \{A. P.\} and Tan, \{H. H.\} and C. Jagadish",

year = "2010",

doi = "10.1109/COMMAD.2010.5699740",

language = "English",

isbn = "9781424473328",

series = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",

pages = "203--204",

booktitle = "2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings",

note = "2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 ; Conference date: 12-12-2010 Through 15-12-2010",

}

Williams, M, Burke, AM, Joyce, HJ, Micolich, AP, Tan, HH & Jagadish, C 2010, A comparative study of transistors based on wurtzite and zincblende InAs nanowires. in 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings., 5699740, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 203-204, 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010, Canberra, ACT, Australia, 12/12/10. https://doi.org/10.1109/COMMAD.2010.5699740

A comparative study of transistors based on wurtzite and zincblende InAs nanowires. / Williams, M.; Burke, A. M.; Joyce, H. J. et al.
2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings. 2010. p. 203-204 5699740 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › peer-review

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AU - Williams, M.

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AU - Tan, H. H.

AU - Jagadish, C.

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AB - We report a comparative study of the electronic properties of nominally identical nanowire field-effect transistor (NW-FET) devices produced using 50 nm diameter InAs nanowires that differ only in phase: ZB on the one hand, and WZ on the other. We find much higher current densities in the ZB NW-FETs, and on/off ratios of up to 100.

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T3 - Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

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EP - 204

BT - 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings

T2 - 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010

Y2 - 12 December 2010 through 15 December 2010

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Williams M, Burke AM, Joyce HJ, Micolich AP, Tan HH , Jagadish C. A comparative study of transistors based on wurtzite and zincblende InAs nanowires. In 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings. 2010. p. 203-204. 5699740. (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). doi: 10.1109/COMMAD.2010.5699740

A comparative study of transistors based on wurtzite and zincblende InAs nanowires

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