A comparison of impurity-free and ion-implantation-induced intermixing of InGaAs/InP quantum wells

L. V. Dao*, M. Gal, C. Carmody, H. H. Tan, C. Jagadish

*Corresponding author for this work

    Research output: Contribution to journalReview articlepeer-review

    19 Citations (Scopus)

    Abstract

    We have compared the time integrated photoluminescence (PL) and the time resolved PL of several lattice matched InGaAs/InP quantum wells intermixed either by ion implantation or an impurity-free method. We have found that the carrier capture rates into quantum wells and carrier relaxation from the wells depend on the type of intermixing used. Our results indicate that the carrier lifetimes are significantly longer in samples intermixed by the impurity-free methods, while the carrier collection efficiency of the quantum wells is more efficient in samples intermixed by ion implantation.

    Original languageEnglish
    Pages (from-to)5252-5254
    Number of pages3
    JournalJournal of Applied Physics
    Volume88
    Issue number9
    DOIs
    Publication statusPublished - 1 Nov 2000

    Fingerprint

    Dive into the research topics of 'A comparison of impurity-free and ion-implantation-induced intermixing of InGaAs/InP quantum wells'. Together they form a unique fingerprint.

    Cite this