TY - GEN
T1 - A deep level transient spectroscopy study of vacancy-related defect profiles in channeled ion implanted silicon
AU - Lay, M. D.H.
AU - McCallum, J. C.
AU - De Azevedo, G. M.
AU - Deenapanray, P. N.K.
AU - Jagadish, C.
N1 - Publisher Copyright:
© 2002 IEEE.
PY - 2002
Y1 - 2002
N2 - The effect of implantation angle on the profile of vacancy-related defects, represented by the divacancy and vacancy phosphorus centres, in n-type <100> Cz-Si implanted with 450 keV P or 600 keV Si ions to a dose of 2 × 109 ions.cm-2, has been examined using Deep Level Transient Spectroscopy depth profiling. Implants were performed with samples aligned with 10° twists from the [110] planar direction and various tilts from the <100> axis. The peak depth of the VP/V2 profile exhibits a systematic variation with the implantation angle: shifting towards the surface, narrowing and increasing in peak concentration as the implantation angle is progressively varied from the aligned direction. For well-channeled 450 keV P ions, the peak in the defect profile is approximately 0.9 microns deeper than the peak in the vacancy profile predicted using the binary collision codes MARLOWE and Crystal-TCAS. The effect of the surface proximity on defect concentrations has been considered by comparing those profiles obtained for 450 keV P implanted samples with those of 600 keV Si implanted samples.
AB - The effect of implantation angle on the profile of vacancy-related defects, represented by the divacancy and vacancy phosphorus centres, in n-type <100> Cz-Si implanted with 450 keV P or 600 keV Si ions to a dose of 2 × 109 ions.cm-2, has been examined using Deep Level Transient Spectroscopy depth profiling. Implants were performed with samples aligned with 10° twists from the [110] planar direction and various tilts from the <100> axis. The peak depth of the VP/V2 profile exhibits a systematic variation with the implantation angle: shifting towards the surface, narrowing and increasing in peak concentration as the implantation angle is progressively varied from the aligned direction. For well-channeled 450 keV P ions, the peak in the defect profile is approximately 0.9 microns deeper than the peak in the vacancy profile predicted using the binary collision codes MARLOWE and Crystal-TCAS. The effect of the surface proximity on defect concentrations has been considered by comparing those profiles obtained for 450 keV P implanted samples with those of 600 keV Si implanted samples.
UR - http://www.scopus.com/inward/record.url?scp=84952660500&partnerID=8YFLogxK
U2 - 10.1109/COMMAD.2002.1237284
DO - 10.1109/COMMAD.2002.1237284
M3 - Conference contribution
T3 - Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
SP - 437
EP - 440
BT - 2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings
A2 - Gal, Michael
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002
Y2 - 11 December 2002 through 13 December 2002
ER -