@inproceedings{5ce1a4b458624e0eba5621fbd72894aa,
title = "A deep level transient spectroscopy study of vacancy-related defect profiles in channeled ion implanted silicon",
abstract = "The effect of implantation angle on the profile of vacancy-related defects, represented by the divacancy and vacancy phosphorus centres, in n-type <100> Cz-Si implanted with 450 keV P or 600 keV Si ions to a dose of 2 × 109 ions.cm-2, has been examined using Deep Level Transient Spectroscopy depth profiling. Implants were performed with samples aligned with 10° twists from the [110] planar direction and various tilts from the <100> axis. The peak depth of the VP/V2 profile exhibits a systematic variation with the implantation angle: shifting towards the surface, narrowing and increasing in peak concentration as the implantation angle is progressively varied from the aligned direction. For well-channeled 450 keV P ions, the peak in the defect profile is approximately 0.9 microns deeper than the peak in the vacancy profile predicted using the binary collision codes MARLOWE and Crystal-TCAS. The effect of the surface proximity on defect concentrations has been considered by comparing those profiles obtained for 450 keV P implanted samples with those of 600 keV Si implanted samples.",
author = "Lay, \{M. D.H.\} and McCallum, \{J. C.\} and \{De Azevedo\}, \{G. M.\} and Deenapanray, \{P. N.K.\} and C. Jagadish",
note = "Publisher Copyright: {\textcopyright} 2002 IEEE.; Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 ; Conference date: 11-12-2002 Through 13-12-2002",
year = "2002",
doi = "10.1109/COMMAD.2002.1237284",
language = "English",
series = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "437--440",
editor = "Michael Gal",
booktitle = "2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings",
address = "United States",
}