A Diamond:H/WO3 Metal-Oxide-Semiconductor Field-Effect Transistor

Zongyou Yin; Moshe Tordjman; Alon Vardi; Rafi Kalish; Jesus A. Del Alamo

doi:10.1109/LED.2018.2808463

A Diamond:H/WO₃ Metal-Oxide-Semiconductor Field-Effect Transistor

Zongyou Yin^*
, Moshe Tordjman
, Alon Vardi
, Rafi Kalish
, Jesus A. Del Alamo

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

36 Citations (Scopus)

Abstract

A p-type Diamond:H/WO₃ metal-oxide-semiconductor field-effect transistor (MOSFET) based on surface transfer doping is demonstrated. Using a low-temperature ALD-grown HfO₂ as gate insulator, the Diamond:H/WO₃ MOSFETs show excellent output characteristics, gate-controllable 2-D hole gas, and low gate leakage current. Long-channel FETs exhibit improved subthreshold behavior but reduced transconductance with respect to short-channel devices. An observed WO₃-thickness-dependent threshold voltage is consistent with enhanced surface transfer doping as the WO₃ layer is thinned down. Low-temperature measurements suggest a significantly lower mobility than expected in this material system. This illustrates the challenge of maintaining high TMO quality during device fabrication.

Original language	English
Pages (from-to)	540-543
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	39
Issue number	4
DOIs	https://doi.org/10.1109/LED.2018.2808463
Publication status	Published - Apr 2018

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title = "A Diamond:H/WO3 Metal-Oxide-Semiconductor Field-Effect Transistor",

abstract = "A p-type Diamond:H/WO3 metal-oxide-semiconductor field-effect transistor (MOSFET) based on surface transfer doping is demonstrated. Using a low-temperature ALD-grown HfO2 as gate insulator, the Diamond:H/WO3 MOSFETs show excellent output characteristics, gate-controllable 2-D hole gas, and low gate leakage current. Long-channel FETs exhibit improved subthreshold behavior but reduced transconductance with respect to short-channel devices. An observed WO3-thickness-dependent threshold voltage is consistent with enhanced surface transfer doping as the WO3 layer is thinned down. Low-temperature measurements suggest a significantly lower mobility than expected in this material system. This illustrates the challenge of maintaining high TMO quality during device fabrication.",

keywords = "Diamond:H, W thickness, gate length, surface transfer doping, temperature",

author = "Zongyou Yin and Moshe Tordjman and Alon Vardi and Rafi Kalish and \{Del Alamo\}, \{Jesus A.\}",

note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

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T1 - A Diamond:H/WO3 Metal-Oxide-Semiconductor Field-Effect Transistor

AU - Yin, Zongyou

AU - Tordjman, Moshe

AU - Vardi, Alon

AU - Kalish, Rafi

AU - Del Alamo, Jesus A.

PY - 2018/4

Y1 - 2018/4

N2 - A p-type Diamond:H/WO3 metal-oxide-semiconductor field-effect transistor (MOSFET) based on surface transfer doping is demonstrated. Using a low-temperature ALD-grown HfO2 as gate insulator, the Diamond:H/WO3 MOSFETs show excellent output characteristics, gate-controllable 2-D hole gas, and low gate leakage current. Long-channel FETs exhibit improved subthreshold behavior but reduced transconductance with respect to short-channel devices. An observed WO3-thickness-dependent threshold voltage is consistent with enhanced surface transfer doping as the WO3 layer is thinned down. Low-temperature measurements suggest a significantly lower mobility than expected in this material system. This illustrates the challenge of maintaining high TMO quality during device fabrication.

AB - A p-type Diamond:H/WO3 metal-oxide-semiconductor field-effect transistor (MOSFET) based on surface transfer doping is demonstrated. Using a low-temperature ALD-grown HfO2 as gate insulator, the Diamond:H/WO3 MOSFETs show excellent output characteristics, gate-controllable 2-D hole gas, and low gate leakage current. Long-channel FETs exhibit improved subthreshold behavior but reduced transconductance with respect to short-channel devices. An observed WO3-thickness-dependent threshold voltage is consistent with enhanced surface transfer doping as the WO3 layer is thinned down. Low-temperature measurements suggest a significantly lower mobility than expected in this material system. This illustrates the challenge of maintaining high TMO quality during device fabrication.

KW - Diamond:H

KW - W thickness

KW - gate length

KW - surface transfer doping

KW - temperature

UR - https://www.scopus.com/pages/publications/85042368603

U2 - 10.1109/LED.2018.2808463

DO - 10.1109/LED.2018.2808463

M3 - Article

SN - 0741-3106

VL - 39

SP - 540

EP - 543

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 4

ER -

A Diamond:H/WO₃ Metal-Oxide-Semiconductor Field-Effect Transistor

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