Abstract
Self-organized GaN nanorods with population densities ranging between 0.1 and 0.5 μm-2 and average heights in the range 1.7-16.5 µm, prepared by metal-organic chemical vapor deposition, were used as scattering centers for random lasing by incorporating Rhodamine 6G liquid dye solutions as the gain media. A lasing threshold as low as 11.3 J cm-2 was obtained from samples with nanorod density above 0.3 μm-2. The threshold depended on the nanorod density and diameter, but not the nanorod height. Lasing emission was observed at multiple angles, a clear indication of random lasing.
Original language | English |
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Article number | 025009 |
Journal | Semiconductor Science and Technology |
Volume | 37 |
Issue number | 2 |
DOIs | |
Publication status | Published - Feb 2022 |