A model for the steady-state photoconductance of an abrupt p-n junction semiconductor diode assuming flat quasi-fermi levels

Keith R. McIntosh*

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    8 Citations (Scopus)

    Abstract

    A theoretical model for the steady-state photoconductance of an abrupt p-n junction semiconductor diode is presented. It assumes one-dimensional geometry and flat quasi-Fermi levels (QFLs) and involves a numerical integration over electrostatic potential. The flat-QFL model permits the determination of the excess carrier concentration in both quasi-neutral regions from a measurement of a semiconductor's photoconductance, accounting for depletion-region modulation more accurately than its alternatives-particularly for thin samples and low-injection conditions. The model can be generalized to include variable carrier mobilities and to have different intrinsic carrier concentrations in n- and p-type layers.

    Original languageEnglish
    Pages (from-to)346-353
    Number of pages8
    JournalIEEE Transactions on Electron Devices
    Volume54
    Issue number2
    DOIs
    Publication statusPublished - Feb 2007

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