A model of electrical isolation in GaN and ZnO bombarded with light ions

A model of a decrease in electrical conductivity of GaN and ZnO under the effect of irradiation with fast ions is suggested. The formation of complexes composed of a doping-impurity atom and the simplest defect formed by the ion beam is considered as the main process that leads to a decrease in the free-carrier concentration and an increase in the resistivity. A comparison of the model-based results and experimental data on the origination of isolation that were obtained for n-GaN and ZnO shows that the model can be used to describe satisfactorily the processes that occur.