A partially depleted absorber photodiode with graded doping injection regions

Xiaowei Li*, Ning Li, Stephen Demiguel, Xiaoguang Zheng, Joe C. Campbell, H. Hoe Tan, Chennupati Jagadish

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    36 Citations (Scopus)

    Abstract

    A partially depleted absorber photodiode with graded absorption injection regions is reported. The 880-nm-thick In0.53Ga0.47As absorption region consists of a depletion layer and graded n- and p-type undepleted injection regions. Under backside illumination at 1.55-μm wavelength, an 8-μm-diameter photodiode exhibited an increase in bandwidth with increasing photocurrent. A saturation current bandwidth product of 990 mA · GHz and a responsivity of 0.67 A/W were achieved.

    Original languageEnglish
    Pages (from-to)2326-2328
    Number of pages3
    JournalIEEE Photonics Technology Letters
    Volume16
    Issue number10
    DOIs
    Publication statusPublished - Oct 2004

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