A partially depleted absorber photodiode with graded doping injection regions

Xiaowei Li; Ning Li; Stephen Demiguel; Xiaoguang Zheng; Joe C. Campbell; H. Hoe Tan; Chennupati Jagadish

doi:10.1109/LPT.2004.834563

A partially depleted absorber photodiode with graded doping injection regions

Xiaowei Li^*, Ning Li, Stephen Demiguel, Xiaoguang Zheng, Joe C. Campbell, H. Hoe Tan, Chennupati Jagadish

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

36 Citations (Scopus)

Abstract

A partially depleted absorber photodiode with graded absorption injection regions is reported. The 880-nm-thick In_0.53Ga_0.47As absorption region consists of a depletion layer and graded n- and p-type undepleted injection regions. Under backside illumination at 1.55-μm wavelength, an 8-μm-diameter photodiode exhibited an increase in bandwidth with increasing photocurrent. A saturation current bandwidth product of 990 mA · GHz and a responsivity of 0.67 A/W were achieved.

Original language	English
Pages (from-to)	2326-2328
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	16
Issue number	10
DOIs	https://doi.org/10.1109/LPT.2004.834563
Publication status	Published - Oct 2004

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abstract = "A partially depleted absorber photodiode with graded absorption injection regions is reported. The 880-nm-thick In0.53Ga0.47As absorption region consists of a depletion layer and graded n- and p-type undepleted injection regions. Under backside illumination at 1.55-μm wavelength, an 8-μm-diameter photodiode exhibited an increase in bandwidth with increasing photocurrent. A saturation current bandwidth product of 990 mA · GHz and a responsivity of 0.67 A/W were achieved.",

author = "Xiaowei Li and Ning Li and Stephen Demiguel and Xiaoguang Zheng and Campbell, {Joe C.} and Tan, {H. Hoe} and Chennupati Jagadish",

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T1 - A partially depleted absorber photodiode with graded doping injection regions

AU - Li, Xiaowei

AU - Li, Ning

AU - Demiguel, Stephen

AU - Zheng, Xiaoguang

AU - Campbell, Joe C.

AU - Tan, H. Hoe

AU - Jagadish, Chennupati

PY - 2004/10

Y1 - 2004/10

N2 - A partially depleted absorber photodiode with graded absorption injection regions is reported. The 880-nm-thick In0.53Ga0.47As absorption region consists of a depletion layer and graded n- and p-type undepleted injection regions. Under backside illumination at 1.55-μm wavelength, an 8-μm-diameter photodiode exhibited an increase in bandwidth with increasing photocurrent. A saturation current bandwidth product of 990 mA · GHz and a responsivity of 0.67 A/W were achieved.

AB - A partially depleted absorber photodiode with graded absorption injection regions is reported. The 880-nm-thick In0.53Ga0.47As absorption region consists of a depletion layer and graded n- and p-type undepleted injection regions. Under backside illumination at 1.55-μm wavelength, an 8-μm-diameter photodiode exhibited an increase in bandwidth with increasing photocurrent. A saturation current bandwidth product of 990 mA · GHz and a responsivity of 0.67 A/W were achieved.

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U2 - 10.1109/LPT.2004.834563

DO - 10.1109/LPT.2004.834563

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SP - 2326

EP - 2328

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 10

ER -

A partially depleted absorber photodiode with graded doping injection regions

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