TY - JOUR
T1 - A Robust Metal-Assisted Etching Process for Ag-Catalyzed Texturing of Silicon
AU - Booker, Katherine
AU - Rahman, Shakir
AU - Chong, Teck
AU - Mankelow, Rowena
AU - Weber, Klaus
AU - Blakers, Andrew
PY - 2015
Y1 - 2015
N2 - Silicon structures with excellent light-trapping performance have been developed using a silver-catalyzed metal-assisted etching (MAE) process. The MAE process can be well controlled through variation in solution composition and exposure times, even when the process is conducted on obscured, polished, 〈1 1 1〉 surfaces. Light trapping was calculated to be >90% of Lambertian for the best performing sample, with solar weighted average reflectance (Rw) of 13% when λ 400-1000 nm. This represents an 18% reflectance reduction compared with a planar sample and 13% improvement compared with a sample with conventional isotexture. This was improved further by encapsulation of the sample, reducing Rw(400-1000 nm) for the MAE-textured sample to 2%. The structures were well passivated using atomic layer deposition and demonstrate surface recombination velocities (Seff) of ≈ 30 cm·s-1 at injection levels of Δn = 1015 cm-3.
AB - Silicon structures with excellent light-trapping performance have been developed using a silver-catalyzed metal-assisted etching (MAE) process. The MAE process can be well controlled through variation in solution composition and exposure times, even when the process is conducted on obscured, polished, 〈1 1 1〉 surfaces. Light trapping was calculated to be >90% of Lambertian for the best performing sample, with solar weighted average reflectance (Rw) of 13% when λ 400-1000 nm. This represents an 18% reflectance reduction compared with a planar sample and 13% improvement compared with a sample with conventional isotexture. This was improved further by encapsulation of the sample, reducing Rw(400-1000 nm) for the MAE-textured sample to 2%. The structures were well passivated using atomic layer deposition and demonstrate surface recombination velocities (Seff) of ≈ 30 cm·s-1 at injection levels of Δn = 1015 cm-3.
U2 - 10.1109/JPHOTOV.2015.2400222
DO - 10.1109/JPHOTOV.2015.2400222
M3 - Article
VL - 5
SP - 766
EP - 773
JO - IEEE Journal of Photovoltaics
JF - IEEE Journal of Photovoltaics
IS - 3
ER -