A versatile WIBS 200 kV ion implanter for materials modification

P. Bond*, D. Duckworth, R. G. Elliman, R. Henshaw, S. T. Johnson, M. C. Ridgway, R. P. Thornton, J. S. Williams, P. Byers, D. J. Chivers

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

The Whickham Ion Beam Systems 200 kV ion implanters at the Royal Melbourne Institute of Technology and at Harwell are used for a wide range of materials modification applications covering semiconductor devices, metals, polymers, insulators and industrial components. In particular, this paper describes flexible features of the prototype RMIT machine, concentrating on the scanning and endstation arrangements. Selected applications are reviewed, with particular attention given to variable temperature implantations into semiconductors.

Original languageEnglish
Pages (from-to)511-516
Number of pages6
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume55
Issue number1-4
DOIs
Publication statusPublished - 2 Apr 1991
Externally publishedYes

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