Ab initio modelling of boron and nitrogen in diamond nanowires

A. S. Barnard*, S. P. Russo, I. K. Snook

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

In this study an analysis is presented of the bonding and structural properties of dehydrogenated and hydrogenated doped cylindrical diamond nanowires calculated using the Vienna Ab Initio Simulation Package, employing density functional theory within the generalized-gradient approximation. The dopants studied here have been inserted substitutionally along the axis of an infinite one-dimensional diamond nanowire and include the single-electron acceptor boron and the single-electron donor nitrogen. The doped nanowires have then been re-relaxed, and properties compared with the undoped structures. The structural properties of relaxed nanowires considered here include an examination bonding via the electron charge density, with the aim of providing a better understanding of the effects of dopants on the stability of diamond nanostructures and nanodevices.

Original languageEnglish
Pages (from-to)2301-2309
Number of pages9
JournalPhilosophical Magazine
Volume83
Issue number19
DOIs
Publication statusPublished - 1 Jul 2003
Externally publishedYes

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