Above-Band Gap Photoinduced Stabilization of Engineered Ferroelectric Domains

Haoxin Mai; Teng Lu; Qian Li; Zhifu Liu; Yongxiang Li; Felipe Kremer; Li Li; Ray L. Withers; Haidan Wen; Yun Liu

doi:10.1021/acsami.8b00254

Above-Band Gap Photoinduced Stabilization of Engineered Ferroelectric Domains

Haoxin Mai, Teng Lu, Qian Li^*, Zhifu Liu, Yongxiang Li, Felipe Kremer, Li Li, Ray L. Withers, Haidan Wen, Yun Liu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

29 Citations (Scopus)

Abstract

The effect of above-band gap photons on the domains of the BiFeO₃ (BFO) thin film was investigated via piezoresponse force microscopy and Kelvin probe force microscopy. It is found that under above-band gap illumination, the relaxation time of the polarization state was significantly extended, while the effective polarizing voltage for the pristine domains was reduced. We propose that this photoinduced domain stabilization can be attributed to the interaction between photogenerated surface charges and domains. Importantly, a similar phenomenon is observed in other ferroelectric (FE) materials with an internal electric field once they are illuminated by above-band gap light, indicating that this photoinduced stabilization is potentially universal rather than specific to BFO. Thus, this study will not only contribute to the knowledge of photovoltaic (PV) phenomena but also provide a new route to promote the stability of PV and FE materials.

Original language	English
Pages (from-to)	12781-12789
Number of pages	9
Journal	ACS applied materials & interfaces
Volume	10
Issue number	15
DOIs	https://doi.org/10.1021/acsami.8b00254
Publication status	Published - 18 Apr 2018

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title = "Above-Band Gap Photoinduced Stabilization of Engineered Ferroelectric Domains",

abstract = "The effect of above-band gap photons on the domains of the BiFeO3 (BFO) thin film was investigated via piezoresponse force microscopy and Kelvin probe force microscopy. It is found that under above-band gap illumination, the relaxation time of the polarization state was significantly extended, while the effective polarizing voltage for the pristine domains was reduced. We propose that this photoinduced domain stabilization can be attributed to the interaction between photogenerated surface charges and domains. Importantly, a similar phenomenon is observed in other ferroelectric (FE) materials with an internal electric field once they are illuminated by above-band gap light, indicating that this photoinduced stabilization is potentially universal rather than specific to BFO. Thus, this study will not only contribute to the knowledge of photovoltaic (PV) phenomena but also provide a new route to promote the stability of PV and FE materials.",

keywords = "KPFM, PFM, above-band gap illumination, domain, ferroelectrics, relaxation time, surface",

author = "Haoxin Mai and Teng Lu and Qian Li and Zhifu Liu and Yongxiang Li and Felipe Kremer and Li Li and Withers, {Ray L.} and Haidan Wen and Yun Liu",

note = "Publisher Copyright: {\textcopyright} 2018 American Chemical Society.",

year = "2018",

month = apr,

day = "18",

doi = "10.1021/acsami.8b00254",

language = "English",

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T1 - Above-Band Gap Photoinduced Stabilization of Engineered Ferroelectric Domains

AU - Mai, Haoxin

AU - Lu, Teng

AU - Li, Qian

AU - Liu, Zhifu

AU - Li, Yongxiang

AU - Kremer, Felipe

AU - Li, Li

AU - Withers, Ray L.

AU - Wen, Haidan

AU - Liu, Yun

PY - 2018/4/18

Y1 - 2018/4/18

N2 - The effect of above-band gap photons on the domains of the BiFeO3 (BFO) thin film was investigated via piezoresponse force microscopy and Kelvin probe force microscopy. It is found that under above-band gap illumination, the relaxation time of the polarization state was significantly extended, while the effective polarizing voltage for the pristine domains was reduced. We propose that this photoinduced domain stabilization can be attributed to the interaction between photogenerated surface charges and domains. Importantly, a similar phenomenon is observed in other ferroelectric (FE) materials with an internal electric field once they are illuminated by above-band gap light, indicating that this photoinduced stabilization is potentially universal rather than specific to BFO. Thus, this study will not only contribute to the knowledge of photovoltaic (PV) phenomena but also provide a new route to promote the stability of PV and FE materials.

AB - The effect of above-band gap photons on the domains of the BiFeO3 (BFO) thin film was investigated via piezoresponse force microscopy and Kelvin probe force microscopy. It is found that under above-band gap illumination, the relaxation time of the polarization state was significantly extended, while the effective polarizing voltage for the pristine domains was reduced. We propose that this photoinduced domain stabilization can be attributed to the interaction between photogenerated surface charges and domains. Importantly, a similar phenomenon is observed in other ferroelectric (FE) materials with an internal electric field once they are illuminated by above-band gap light, indicating that this photoinduced stabilization is potentially universal rather than specific to BFO. Thus, this study will not only contribute to the knowledge of photovoltaic (PV) phenomena but also provide a new route to promote the stability of PV and FE materials.

KW - KPFM

KW - PFM

KW - above-band gap illumination

KW - domain

KW - ferroelectrics

KW - relaxation time

KW - surface

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U2 - 10.1021/acsami.8b00254

DO - 10.1021/acsami.8b00254

M3 - Article

SN - 1944-8244

VL - 10

SP - 12781

EP - 12789

JO - ACS applied materials & interfaces

JF - ACS applied materials & interfaces

IS - 15

ER -

Above-Band Gap Photoinduced Stabilization of Engineered Ferroelectric Domains

Abstract

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