Acceptor-like deep level defects in ion-implanted ZnO

L. Vines; J. Wong-Leung; C. Jagadish; V. Quemener; E. V. Monakhov; B. G. Svensson

doi:10.1063/1.4720514

Acceptor-like deep level defects in ion-implanted ZnO

L. Vines^*, J. Wong-Leung, C. Jagadish, V. Quemener, E. V. Monakhov, B. G. Svensson

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

N-type ZnO samples have been implanted with MeV Zn ⁺ ions at room temperature to doses between 1 × 10 ⁸ and 2 × 10 ¹⁰cm ^{- 2}, and the defect evolution has been studied by capacitance-voltage and deep level transient spectroscopy measurements. The results show a dose dependent compensation by acceptor-like defects along the implantation depth profile, and at least four ion-induced deep-level defects arise, where two levels with energy positions of 1.06 and 1.2 eV below the conduction band increase linearly with ion dose and are attributed to intrinsic defects. Moreover, a re-distribution of defects as a function of depth is observed already at temperatures below 400 K.

Original language	English
Article number	212106
Journal	Applied Physics Letters
Volume	100
Issue number	21
DOIs	https://doi.org/10.1063/1.4720514
Publication status	Published - 21 May 2012

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abstract = "N-type ZnO samples have been implanted with MeV Zn + ions at room temperature to doses between 1 × 10 8 and 2 × 10 10cm - 2, and the defect evolution has been studied by capacitance-voltage and deep level transient spectroscopy measurements. The results show a dose dependent compensation by acceptor-like defects along the implantation depth profile, and at least four ion-induced deep-level defects arise, where two levels with energy positions of 1.06 and 1.2 eV below the conduction band increase linearly with ion dose and are attributed to intrinsic defects. Moreover, a re-distribution of defects as a function of depth is observed already at temperatures below 400 K.",

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AU - Vines, L.

AU - Wong-Leung, J.

AU - Jagadish, C.

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AU - Monakhov, E. V.

AU - Svensson, B. G.

PY - 2012/5/21

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N2 - N-type ZnO samples have been implanted with MeV Zn + ions at room temperature to doses between 1 × 10 8 and 2 × 10 10cm - 2, and the defect evolution has been studied by capacitance-voltage and deep level transient spectroscopy measurements. The results show a dose dependent compensation by acceptor-like defects along the implantation depth profile, and at least four ion-induced deep-level defects arise, where two levels with energy positions of 1.06 and 1.2 eV below the conduction band increase linearly with ion dose and are attributed to intrinsic defects. Moreover, a re-distribution of defects as a function of depth is observed already at temperatures below 400 K.

AB - N-type ZnO samples have been implanted with MeV Zn + ions at room temperature to doses between 1 × 10 8 and 2 × 10 10cm - 2, and the defect evolution has been studied by capacitance-voltage and deep level transient spectroscopy measurements. The results show a dose dependent compensation by acceptor-like defects along the implantation depth profile, and at least four ion-induced deep-level defects arise, where two levels with energy positions of 1.06 and 1.2 eV below the conduction band increase linearly with ion dose and are attributed to intrinsic defects. Moreover, a re-distribution of defects as a function of depth is observed already at temperatures below 400 K.

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Acceptor-like deep level defects in ion-implanted ZnO

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