Abstract
A semiconductor device comprises nanocrystalline material bounded by a dielectric barrier layer material. Dopants are located in the dielectric material adjacent the nanocrystalline material, the dopants having a lowest unoccupied molecular orbital (LUMO) greater than or equal to 0.5 electronvolts below the highest occupied molecular orbital (HOMO) of the semiconductor material. When the dopant is activated the nanocrystalline material exchanges an electron with a dopant atom to create a hole as a majority carrier in the nanocrystalline material.
| Original language | English |
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| Type | Patent |
| Media of output | online |
| Publication status | Published - 17 Feb 2011 |