@inproceedings{7a45c57bfed1410d9986f0f5a45fb003,
title = "Accurate defect recombination parameters: What are the limitations of current analyses?",
abstract = "A key strategy for further reducing the cost of solar electricity is through the development of very-high efficiency silicon solar cells (>27%). The challenge in achieving this goal lies in overcoming limitations imposed by the electronic quality of the silicon wafers themselves. To overcome this challenge, there is an urgent need for a refined understanding of defects limiting the electronic quality of silicon wafers. This paper provides a nuanced and detailed picture what constitutes accurate recombination parameters for defects in silicon. It outlines three widespread issues in existing measurements of recombination parameters. It enables robust simulation of the lifetime in silicon for solar cell applications.",
keywords = "Deep Level Transient Spectroscopy, Recombination, Temperature and Injection Dependent Lifetime Spectroscopy, defect, flaws, multivalent",
author = "Rougieux, {Fiacre E.} and Chang Sun and Yan Zhu and MacDonald, {Daniel H.}",
note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 ; Conference date: 10-06-2018 Through 15-06-2018",
year = "2018",
month = nov,
day = "26",
doi = "10.1109/PVSC.2018.8547585",
language = "English",
series = "2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "2520--2523",
booktitle = "2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC",
address = "United States",
}