Accurate measurement of the formation rate of iron-boron pairs in silicon

J. Tan; D. MacDonald; F. Rougieux; A. Cuevas

doi:10.1088/0268-1242/26/5/055019

Accurate measurement of the formation rate of iron-boron pairs in silicon

J. Tan^*, D. MacDonald, F. Rougieux, A. Cuevas

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

29 Citations (Scopus)

Abstract

This paper presents new data regarding the formation rate of iron-boron (Fe_i-B) pairs in p-type crystalline silicon. Improvements in the temperature control of the sample, a reduction in measurement error of the effective lifetime of the sample after all Fe_i-B pairs have reformed, and improved statistical analysis have led to a revision of the value of the pre-factor in the equation relating the association time constant of iron-acceptor pairs to the acceptor concentration. The new equation predicts a 14% slower repairing time than a previous commonly used equation, and reduces the uncertainty in determining the acceptor concentration from the repairing time from ± 24% to ± 7%.

Original language	English
Article number	055019
Journal	Semiconductor Science and Technology
Volume	26
Issue number	5
DOIs	https://doi.org/10.1088/0268-1242/26/5/055019
Publication status	Published - 2011

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title = "Accurate measurement of the formation rate of iron-boron pairs in silicon",

abstract = "This paper presents new data regarding the formation rate of iron-boron (Fei-B) pairs in p-type crystalline silicon. Improvements in the temperature control of the sample, a reduction in measurement error of the effective lifetime of the sample after all Fei-B pairs have reformed, and improved statistical analysis have led to a revision of the value of the pre-factor in the equation relating the association time constant of iron-acceptor pairs to the acceptor concentration. The new equation predicts a 14% slower repairing time than a previous commonly used equation, and reduces the uncertainty in determining the acceptor concentration from the repairing time from ± 24% to ± 7%.",

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AU - Tan, J.

AU - MacDonald, D.

AU - Rougieux, F.

AU - Cuevas, A.

PY - 2011

Y1 - 2011

N2 - This paper presents new data regarding the formation rate of iron-boron (Fei-B) pairs in p-type crystalline silicon. Improvements in the temperature control of the sample, a reduction in measurement error of the effective lifetime of the sample after all Fei-B pairs have reformed, and improved statistical analysis have led to a revision of the value of the pre-factor in the equation relating the association time constant of iron-acceptor pairs to the acceptor concentration. The new equation predicts a 14% slower repairing time than a previous commonly used equation, and reduces the uncertainty in determining the acceptor concentration from the repairing time from ± 24% to ± 7%.

AB - This paper presents new data regarding the formation rate of iron-boron (Fei-B) pairs in p-type crystalline silicon. Improvements in the temperature control of the sample, a reduction in measurement error of the effective lifetime of the sample after all Fei-B pairs have reformed, and improved statistical analysis have led to a revision of the value of the pre-factor in the equation relating the association time constant of iron-acceptor pairs to the acceptor concentration. The new equation predicts a 14% slower repairing time than a previous commonly used equation, and reduces the uncertainty in determining the acceptor concentration from the repairing time from ± 24% to ± 7%.

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VL - 26

JO - Semiconductor Science and Technology

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IS - 5

M1 - 055019

ER -

Accurate measurement of the formation rate of iron-boron pairs in silicon

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