TY - GEN
T1 - Activation energy and blistering rate in hydrogen-implanted semiconductors
AU - Pyke, Daniel J.
AU - Elliman, Robert G.
AU - McCallum, Jeffrey C.
PY - 2012
Y1 - 2012
N2 - Hydrogen blister rates in Si (100), Si (111) and Ge (100) substrates are compared as a function of annealing temperature and time, for a range of implant energies and fluences. For each material, the rate of blister formation was found to exhibit Arrhenius behavior and to be characterised by a single activation energy over the temperature range examined. The extracted activation energies were 2.28±0.03 eV, 2.17±0.06 eV and 1.4±0.03 eV for (100) Si; (111) Si and (100) Ge, respectively. These results are compared with reported measurements and discussed in relation to proposed models of hydrogen blistering.
AB - Hydrogen blister rates in Si (100), Si (111) and Ge (100) substrates are compared as a function of annealing temperature and time, for a range of implant energies and fluences. For each material, the rate of blister formation was found to exhibit Arrhenius behavior and to be characterised by a single activation energy over the temperature range examined. The extracted activation energies were 2.28±0.03 eV, 2.17±0.06 eV and 1.4±0.03 eV for (100) Si; (111) Si and (100) Ge, respectively. These results are compared with reported measurements and discussed in relation to proposed models of hydrogen blistering.
UR - http://www.scopus.com/inward/record.url?scp=84865035766&partnerID=8YFLogxK
U2 - 10.1557/opl.2012.677
DO - 10.1557/opl.2012.677
M3 - Conference contribution
SN - 9781605114019
T3 - Materials Research Society Symposium Proceedings
SP - 79
EP - 84
BT - Properties and Processes at the Nanoscale - Nanomechanics of Material Behavior
T2 - 2011 MRS Fall Meeting
Y2 - 28 November 2011 through 2 December 2011
ER -